Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRGP35B60PD-EP

IGBT 600V 60A 308W TO247AD

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Infineon Technologies IRG6S320UTRRPBF

IGBT 330V 50A 114W D2PAK

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IXYS IXSK50N60AU1

IGBT 600V 75A 300W TO264AA

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IXYS IXGR50N160H1

IGBT 1600V 75A 240W ISOPLUS247

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Infineon Technologies IRG7S313UTRLPBF

IGBT 330V 40A 78W D2PAK

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Infineon Technologies IRG6S320UTRLPBF

IGBT 330V 50A 114W D2PAK

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Infineon Technologies IRG4BC30F-STRRP

IGBT 600V 31A 100W D2PAK

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Infineon Technologies IRG4BC30F-STRLP

IGBT 600V 31A 100W D2PAK

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