Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.


Infineon Technologies AUIRGP50B60PD1E

IGBT 600V 75A 390W TO247AD

0

Infineon Technologies AUIRGP50B60PD1

IGBT 600V 75A 390W TO247AC

0

Infineon Technologies AUIRGP35B60PD-E

IGBT 600V 60A 308W TO247AD

0

Infineon Technologies AUIRGP35B60PD

IGBT 600V 60A 308W TO247AC

0

Infineon Technologies AUIRG4BC30S-S

IGBT 600V 34A 100W D2PAK

0

STMicroelectronics STGBL6NC60DIT4

IGBT 600V 14A 56W D2PAK

0

ON Semiconductor FGPF4533

IGBT 330V 28.4W TO220-3FP

0

Infineon Technologies IRGS8B60KTRLPBF

IGBT 600V 28A 167W D2PAK

0