Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Renesas Electronics America RJH60D7DPM-00#T1

IGBT 600V 90A 55W TO3PFM

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Renesas Electronics America RJH60D6DPK-00#T0

IGBT 600V 80A 260W TO3P

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Renesas Electronics America RJH60D5DPM-00#T1

IGBT 600V 75A 45W TO3PFM

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Renesas Electronics America RJH60D5DPK-00#T0

IGBT 600V 75A 200W TO3P

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Renesas Electronics America RJH60D3DPP-M0#T2

IGBT 600V 35A 30W TO220FL

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Renesas Electronics America RJH60D2DPP-M0#T2

IGBT 600V 25A 27.2W TO220FL

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Renesas Electronics America RJH60D1DPP-M0#T2

IGBT 600V 20A 20.8W TO220FL

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Renesas Electronics America RJH60D0DPM-00#T1

IGBT 600V 45A 40W TO3PFM

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