Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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STMicroelectronics STGF15M65DF2

TRENCH GATE FIELD-STOP IGBT M SE

2.18

ON Semiconductor HGT1S20N60C3S9A

IGBT 600V 45A 164W TO263AB

0

STMicroelectronics STGP5H60DF

TRENCH GATE FIELD-STOP IGBT, H S

1.11

IXYS IXBT20N360HV

IGBT 3600V 70A TO-268HV

38.52

IXYS IXYT25N250CHV

IGBT 2500V 235A TO-268HV

26.08

IXYS IXBH42N170

IGBT 1700V 80A 360W TO247

20.77

Infineon Technologies IGB50N65S5ATMA1

IGBT PRODUCTS

0

Infineon Technologies IKD10N60RFATMA1

IGBT 600V 20A 150W PG-TO252-3

0