Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXBK75N170

IGBT 1700V 200A 1040W TO264

50.37

IXYS IXBT20N300HV

IGBT 3000V 50A 250W TO268

36.68

IXYS IXYX25N250CV1HV

IGBT 2500V 235A PLUS247

35.67

IXYS IXXX300N60B3

IGBT 600V 550A 2300W TO247

24.87

Microsemi Corporation APT50GN120L2DQ2G

IGBT 1200V 134A 543W TO264

18.17

Infineon Technologies IKQ75N120CS6XKSA1

IGBT 1200V 75A TO247-3-46

16.62

IXYS IXGT2N250

IGBT 2500V 5.5A 32W TO-268

14.55

IXYS IXXK110N65B4H1

IGBT 650V 240A 880W TO264

11.53