Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXXX110N65B4H1

IGBT 650V 240A 880W PLUS247

11.09

ON Semiconductor NGTB50N120FL2WG

IGBT 1200V 100A 535W TO247

5.88

IXYS IXGA20N120A3

IGBT 1200V 40A 180W TO263

5.01

STMicroelectronics STGWA50M65DF2

TRENCH GATE FIELD-STOP IGBT M SE

4.12

ON Semiconductor FGA25N120ANTDTU-F109

IGBT 1200V 50A 312W TO3P

3.11

ON Semiconductor HGTG12N60A4D

IGBT 600V 54A 167W TO247

2.91

STMicroelectronics STGP20V60DF

IGBT 600V 40A 167W TO220AB

2.62

Infineon Technologies IKP10N60TXKSA1

IGBT 600V 20A 110W TO220-3

2.19