Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ROHM Semiconductor RGCL80TK60GC11

IGBT

4.22

ROHM Semiconductor RGTH40TK65GC11

IGBT

4.19

ROHM Semiconductor RGCL80TS60DGC11

IGBT

4.12

ON Semiconductor NGTB40N65FL2WG

IGBT 650V 80A 366W TO247

4.08

ROHM Semiconductor RGTV60TS65GC11

650V 30A FIELD STOP TRENCH IGBT

4.04

ROHM Semiconductor RGW60TS65GC11

650V 30A FIELD STOP TRENCH IGBT

4

STMicroelectronics STGWA40IH65DF

TRENCH GATE FIELD-STOP 650 V 40

3.9

ROHM Semiconductor RGCL60TS60DGC11

IGBT

3.81