Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ROHM Semiconductor RGT40NS65DGC9

IGBT

2.89

ROHM Semiconductor RGT40TM65DGC9

FIELD STOP TRENCH IGBT

2.87

ON Semiconductor FGH40N60UFTU

IGBT 600V 80A 290W TO247

2.85

ON Semiconductor NGTB30N135IHR1WG

IGBT 1350V 30A TO247

2.8

ON Semiconductor FGAF20N60SMD

IGBT 600V 40A 62.5W TO-3PF

2.76

ON Semiconductor NGTB15N120IHRWG

IGBT 1200V 15A TO247

2.74

ON Semiconductor HGTP12N60A4D

IGBT 600V 54A 167W TO220AB

2.63

ROHM Semiconductor RGT30NS65DGC9

IGBT

2.53