Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ROHM Semiconductor RGTH60TK65DGC11

IGBT

5.2

ROHM Semiconductor RGW80TS65DGC11

650V 40A FIELD STOP TRENCH IGBT

5.14

ROHM Semiconductor RGW80TK65GVC11

650V 40A FIELD STOP TRENCH IGBT

5.04

ROHM Semiconductor RGTV60TS65DGC11

650V 30A FIELD STOP TRENCH IGBT

5.01

ROHM Semiconductor RGTH80TK65GC11

IGBT

4.98

ROHM Semiconductor RGTH50TK65DGC11

IGBT

4.93

ROHM Semiconductor RGTV00TS65GC11

650V 50A FIELD STOP TRENCH IGBT

4.9

ROHM Semiconductor RGW00TS65GC11

650V 50A FIELD STOP TRENCH IGBT

4.77