Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXSH35N120A

IGBT 1200V 70A 300W TO247

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IXYS IXSH30N60U1

IGBT 600V 50A 200W TO247

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IXYS IXSH30N60AU1

IGBT 600V 50A 200W TO247

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IXYS IXSH25N120AU1

IGBT 1200V 50A 200W TO247

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IXYS IXSH24N60U1

IGBT 600V 48A 150W TO247

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IXYS IXSH24N60BD1

IGBT 600V 48A 150W TO247

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IXYS IXSH24N60B

IGBT 600V 48A 150W TO247

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IXYS IXSH24N60AU1

IGBT 600V 48A 150W TO247

0