Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Microsemi Corporation APT20GT60BRDQ1G

IGBT 600V 43A 174W TO247

7.39

Microsemi Corporation APT50GT60BRG

IGBT 600V 110A 446W TO247

7.04

ON Semiconductor FGA30N120FTDTU

IGBT 1200V 60A 339W TO3P

6.68

Microsemi Corporation APT36GA60B

IGBT 600V 65A 290W TO-247

6.44

Microsemi Corporation APT45GR65B

IGBT 650V 92A 357W TO-247

6.39

Infineon Technologies IGW50N65F5FKSA1

IGBT 650V 80A 305W PG-TO247-3

5.09

Infineon Technologies IKW40N65WR5XKSA1

IGBT TRENCH 650V 80A TO247-3

4.32

Infineon Technologies IGW40N65H5FKSA1

IGBT 650V 74A 255W PG-TO247-3

3.86