Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ROHM Semiconductor RGT8NL65DGTL

FIELD STOP TRENCH IGBT

0

Microsemi Corporation APT50GF120LRG

IGBT 1200V 135A 781W TO264

22

Microsemi Corporation APT95GR65B2

IGBT 650V 208A 892W T-MAX

10.76

Infineon Technologies IRGP4660D-EPBF

IGBT 600V 100A 330W TO247AD

9.98

Infineon Technologies IRGP4660DPBF

IGBT 600V 100A 330W TO247AC

9.63

Microsemi Corporation APT43GA90BD30

IGBT 900V 78A 337W TO247

9.58

Microsemi Corporation APT30GS60BRDQ2G

IGBT 600V 54A 250W SOT227

8.23

Microsemi Corporation APT43GA90B

IGBT 900V 78A 337W TO-247

7.62