Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Renesas Electronics America RJH60D3DPE-00#J3

IGBT 600V 35A LDPAK

0

STMicroelectronics STGP20H60DF

IGBT 600V 40A 167W TO220

3

ROHM Semiconductor RGTH60TS65GC11

IGBT 650V 58A 197W TO-247N

2.93

Renesas Electronics America RJH60D1DPE-00#J3

IGBT 600V 20A 52W LDPAK

0

STMicroelectronics STGB30H60DLFB

TRENCH GATE FIELD-STOP IGBT, HB

0

Renesas Electronics America RJH60V2BDPP-M0#T2

IGBT 600V 25A 34W TO-220FL

2.99

Infineon Technologies IRGS14C40LPBF

IGBT 430V 20A 125W D2PAK

2.84

Renesas Electronics America RJP60D0DPP-M0#T2

IGBT 600V 45A 35W TO-220FL

2.98