Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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STMicroelectronics STGW20V60F

IGBT 600V 40A 167W TO247

3.2

Infineon Technologies IRGIB6B60KDPBF

IGBT 600V 11A 38W TO220FP

3.12

ON Semiconductor NGTG20N60L2TF1G

IGBT 600V 40A 64W TO-3PF

3.11

ROHM Semiconductor RGTH50TS65DGC11

IGBT 650V 50A 174W TO-247N

3.15

Infineon Technologies IGW20N60H3FKSA1

IGBT 600V 40A 170W TO247-3

3.1

Infineon Technologies IGP40N65H5XKSA1

IGBT 650V 74A 255W PG-TO247-3

3.07

ON Semiconductor NGTB25N120IHLWG

IGBT 1200V 50A 192W TO247-3

3.06

STMicroelectronics STGB10M65DF2

IGBT 650V 10A D2PAK

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