IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Microsemi Corporation APTGT75SK170D1G

IGBT 1700V 120A 520W D1

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Microsemi Corporation APTGT75DH60TG

IGBT MOD TRENCH ASYM BRIDGE SP4

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Microsemi Corporation APTGT75DH120TG

IGBT MOD TRENCH ASYM BRIDGE SP4

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Microsemi Corporation APTGT75DA170T1G

IGBT 1700V 130A 465W SP1

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Microsemi Corporation APTGT75DA170D1G

IGBT 1700V 120A 520W D1

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Microsemi Corporation APTGT75DA120T1G

IGBT 1200V 110A 357W SP1

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Microsemi Corporation APTGT75DA120D1G

IGBT 1200V 110A 357W D1

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Microsemi Corporation APTGT75A170D1G

IGBT MOD TRENCH PHASE LEG D1

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