IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Infineon Technologies F3L300R12ME4B22BOSA1

IGBT MODULE VCES 650V 300A

170.64

Microsemi Corporation APTGT300A120D3G

IGBT MODULE TRENCH PHASE LEG D3

170.44

Infineon Technologies FF450R12ME4B11BPSA1

IGBT MODULE VCES 600V 450A

169.17

Infineon Technologies FF300R17ME4B11BOSA1

IGBT MODULE VCES 600V 300A

169.17

Microsemi Corporation APTGL700SK120D3G

PWR MOD IGBT4 1200V 840A D3

169.12

Microsemi Corporation APTGL700DA120D3G

PWR MOD IGBT4 1200V 840A D3

169.12

Microsemi Corporation APTGL120TA120TPG

IGBT4 PHASE LEG 1200V 140A SP6

168.56

Infineon Technologies FF300R17ME4PB11BPSA1

MOD IGBT MED PWR ECONOD-4

168.42