IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.


Infineon Technologies FS225R17KE3BOSA1

MOD IGBT MED PWR ECONOPP-1

455.18

Infineon Technologies DF900R12IP4DBOSA1

PRIMPACK IGBT MOD VCE 1200V 900A

454.83

Infineon Technologies FD900R12IP4DBOSA1

IGBT MODULE VCES 1200V 900A

454.83

Vishay / Semiconductor - Diodes Division VS-GB400AH120N

IGBT 1200V 650A 2500W INT-A-PAK

452.02

Infineon Technologies FS225R17KE4BOSA1

MOD IGBT MED PWR ECONOPP-1

449.19

Vishay / Semiconductor - Diodes Division VS-GT400TH60N

IGBT 600V 530A 1600W DIAP

448.52

Infineon Technologies DF600R12IP4DVBOSA1

IGBT MODULE VCES 1200V 600A

443.45

Infineon Technologies FF600R12IP4VBOSA1

IGBT MODULE VCES 600V 600A

435.96