IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.


Infineon Technologies FF900R12IE4VBOSA1

IGBT MODULE VCES 1200V 900A

537.69

Infineon Technologies FF650R17IE4VBOSA1

IGBT MODULE VCES 1700V 650A

529.79

Infineon Technologies FS450R12OE4PBOSA1

MOD IGBT MED PWR ECONOPP-2

500.78

Infineon Technologies DF900R12IP4DVBOSA1

PRIMPACK IGBT MOD VCE 1200V 900A

495.77

Infineon Technologies FD900R12IP4DVBOSA1

IGBT MODULE VCES 1200V 900A

495.77

Infineon Technologies FS300R17OE4BOSA1

MOD IGBT MED PWR ECONOPP-2

491.12

Infineon Technologies IFS200V12PT4BOSA1

MODULE IPM MIPAQ-3

482.23

Infineon Technologies FF650R17IE4BOSA1

IGBT MODULE VCES 1700V 650A

465.43