IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Infineon Technologies FZ2400R17HP4B9HOSA2

MODULE IGBT IHMB190-2

1006.96

Infineon Technologies FD600R17KE3KB5NOSA1

IGBT MODULE VCES 600V 600A

1001.98

Infineon Technologies FZ2400R17HE4B9HOSA2

MODULE IGBT IHMB190-2

989.76

Infineon Technologies FZ1600R17HP4B2BOSA2

IGBT MODULE 1700V 1600A

989.76

Infineon Technologies FD800R17HP4KB2BOSA2

IGBT MODULE VCES 1700V 800A

977.49

Infineon Technologies FZ2400R12HE4PB9HPSA1

MODULE IGBT IHMB190-2

976.46

Infineon Technologies FF800R17KP4B2NOSA2

IGBT MODULE 1700V 800A

973.73

Infineon Technologies FF1200R12KE3NOSA1

IGBT MODULE VCES 1200V 1200A

968.16