IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Infineon Technologies FZ3600R12HP4HOSA2

MODULE IGBT IHMB190-2

1170.07

Infineon Technologies FF1500R12IE5PBPSA1

PP IHM I XHP 1 7KV

1154.55

Infineon Technologies FF1500R12IE5BPSA1

PP IHM I XHP 17KV

1122.22

Infineon Technologies FD800R17KE3B2NOSA1

IGBT MODULE 1700V 800A

1097.83

Infineon Technologies FD1200R17HP4KB2BOSA2

IGBT MODULE 1700V 1200A

1097.83

Infineon Technologies FF1200R17KE3NOSA1

IGBT MODULE VCES 1200V 1200A

1043.79

Infineon Technologies FZ2400R17HE4PB9HPSA1

MODULE IGBT IHMB190-2

1015.33

Infineon Technologies FZ800R12KS4B2NOSA1

MODULE IGBT A-IHM130-1

1007.1