Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.

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Toshiba Semiconductor and Storage 2SC5201,T6MURAF(J

TRANS NPN 50MA 600V TO226-3

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Toshiba Semiconductor and Storage 2SC5201,T6F(J

TRANS NPN 50MA 600V TO226-3

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Toshiba Semiconductor and Storage 2SC5201,F(J

TRANS NPN 50MA 600V TO226-3

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Toshiba Semiconductor and Storage 2SC5201(TE6,F,M)

TRANS NPN 50MA 600V TO226-3

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Toshiba Semiconductor and Storage 2SC5201(T6MURATAFM

TRANS NPN 50MA 600V TO226-3

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Toshiba Semiconductor and Storage 2SC5172(YAZK,Q,M)

TRANS NPN 5A 400V TO220-3

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Toshiba Semiconductor and Storage 2SC5171(ONK,Q,M)

TRANS NPN 2A 180V TO220-3

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Toshiba Semiconductor and Storage 2SC5171(LBS2MATQ,M

TRANS NPN 2A 180V TO220-3

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