Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.

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Toshiba Semiconductor and Storage 2SD2257(Q,M)

TRANS NPN 3A 100V TO220-3

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Toshiba Semiconductor and Storage 2SD2206(TE6,F,M)

TRANS NPN 2A 100V TO226-3

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Toshiba Semiconductor and Storage 2SD2206(T6CANO,F,M

TRANS NPN 2A 100V TO226-3

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Toshiba Semiconductor and Storage 2SD2206(T6CNO,A,F)

TRANS NPN 2A 100V TO226-3

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Toshiba Semiconductor and Storage 2SD2129,LS4ALPSQ(M

TRANS NPN 3A 100V TO220-3

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Toshiba Semiconductor and Storage 2SD2129,ALPSQ(M

TRANS NPN 3A 100V TO220-3

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Toshiba Semiconductor and Storage 2SC6139,T2F(M

TRANS NPN 1.5A 160V SC71

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Toshiba Semiconductor and Storage 2SC6042,T2WNLQ(J

TRANS NPN 1A 375V SC71

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