Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Infineon Technologies BFP193WE6327HTSA1

RF TRANS NPN 12V 8GHZ SOT343-4

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Infineon Technologies BFP183WE6327BTSA1

RF TRANS NPN 12V 8GHZ SOT343-4

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Infineon Technologies BFP182WE6327HTSA1

RF TRANS NPN 12V 8GHZ SOT343-4

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Infineon Technologies BFP 420F E6327

RF TRANS NPN 5V 25GHZ 4TSFP

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Infineon Technologies BFP 405F E6327

RF TRANS NPN 5V 25GHZ 4TSFP

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Infineon Technologies BFP540E6327BTSA1

RF TRANS NPN 5V 30GHZ SOT343-4

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Infineon Technologies BFP 650F E6327

RF TRANS NPN 4.5V 42GHZ 4TSFP

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Broadcom Limited AT-41500-GP4

RF TRANS NPN 12V 8GHZ DIE

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