Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Panasonic Electronic Components 2SC3937G0L

RF TRANS NPN 10V 6GHZ SMINI3-F2

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Panasonic Electronic Components 2SC3934G0L

RF TRANS NPN 12V 4.5GHZ SMINI3

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Panasonic Electronic Components 2SC3932GTL

RF TRANS NPN 20V 1.6GHZ SMINI3

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Panasonic Electronic Components 2SC3932GSL

RF TRANS NPN 20V 1.6GHZ SMINI3

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Infineon Technologies BFR 193W E6327

RF TRANS NPN 12V 8GHZ SOT323-3

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Infineon Technologies BFR 183W E6327

RF TRANS NPN 12V 8GHZ SOT323-3

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Infineon Technologies BFR 181W E6327

RF TRANS NPN 12V 8GHZ SOT323-3

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Infineon Technologies BFP196WE6327HTSA1

RF TRANS NPN 12V 7.5GHZ SOT343-4

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