Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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CEL NE46234-T1-AZ

RF TRANS NPN 12V 6GHZ SOT89

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Infineon Technologies BGR420H6327XTSA1

RF TRANS NPN 13V SOT343-4

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Infineon Technologies BGR405H6327XTSA1

RF TRANS NPN 5V SOT343-4

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Infineon Technologies BFY193PZZZA1

RF TRANS NPN 12V 7.5GHZ MICRO X1

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Infineon Technologies BFR183WH6327XTSA1

RF TRANS NPN 12V 8GHZ SOT323-3

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Infineon Technologies BFP460E6433HTMA1

RF TRANS NPN 5.8V 22GHZ SOT343-4

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Infineon Technologies BFP 196R E6327

RF TRANS NPN 12V 7.5GHZ SOT143-4

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Infineon Technologies BF799WH6327XTSA1

RF TRANS NPN 20V 800MHZ SOT323-3

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