Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

---

Infineon Technologies BFP 740FESD E6327

RF TRANS NPN 4.7V 47GHZ 4TSFP

0

Infineon Technologies BFR 380F E6327

RF TRANS NPN 9V 14GHZ TSFP-3

0

Infineon Technologies BFR 360F E6327

RF TRANS NPN 9V 14GHZ TSFP-3

0

Infineon Technologies BFP 640FESD E6327

RF TRANS NPN 4.7V 46GHZ 4TSFP

0

Infineon Technologies BFP 720F E6327

RF TRANS NPN 4.7V 45GHZ 4TSFP

0

Infineon Technologies BFP 720FESD E6327

RF TRANS NPN 4.7V 45GHZ 4TSFP

0

Ampleon USA Inc. BLW96/01,112

RF TRANS NPN 55V 235MHZ CRFM4

0

CEL NE46234-T1-SE-AZ

RF TRANS NPN 12V 6GHZ SOT89

0