Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

ON Semiconductor FGH25T120SMD-F155

IGBT 1200V 50A 428W TO247-3

6.48

Infineon Technologies AIGW50N65F5XKSA1

IGBT 650V TO247-3

6.46

ROHM Semiconductor RGTVX6TS65GC11

650V 80A FIELD STOP TRENCH IGBT

6.39

Infineon Technologies AIGW50N65H5XKSA1

IGBT 650V TO247-3

6.46

Infineon Technologies AIGW40N65F5XKSA1

IGBT 650V TO247-3

6.38

Infineon Technologies AIGW40N65H5XKSA1

IGBT 650V TO247-3

6.38

ROHM Semiconductor RGTV00TS65DGC11

650V 50A FIELD STOP TRENCH IGBT

6.36

ROHM Semiconductor RGW00TK65DGVC11

650V 50A FIELD STOP TRENCH IGBT

6.36