IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.


Infineon Technologies FF300R12ME4PB11BPSA1

MOD IGBT MED PWR ECONOD-4

139.7

Microsemi Corporation APTGT75TDU120PG

IGBT MOD TRPL DUAL SOURCE SP6-P

139.64

Microsemi Corporation APTGT75TA120PG

POWER MOD IGBT 3PHASE LEG SP6

139.64

Infineon Technologies FS100R12PT4BOSA1

IGBT MODULE VCES 600V 100A

139.4

Microsemi Corporation APTGT150TDU60PG

IGBT MODULE TRPL DUAL SRCE SP6P

139.38

Microsemi Corporation APTGT150TA60PG

IGBT MODULE TRPL PHASE LEG SP6P

139.38

Infineon Technologies FS100R12KT4GBOSA1

IGBT MODULE VCES 600V 100A

139.17

Infineon Technologies FF225R12MS4BOSA1

IGBT MODULE VCES 1200V 225A

139.12