IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Infineon Technologies FF450R12KE4PHOSA1

MOD IGBT MED PWR 62MM-1

160.7

Microsemi Corporation APTGLQ150H120G

POWER MODULE - IGBT

159.04

Infineon Technologies FS100R17KE3BOSA1

IGBT MODULE VCES 600V 100A

159.01

Infineon Technologies F4100R12KS4BOSA1

IGBT MODULE VCES 1200V 100A

158.89

Infineon Technologies FS200R07N3E4RB11BOSA1

IGBT MODULE VCES 600V 200A

158.42

Vishay / Semiconductor - Diodes Division VS-GB300NH120N

IGBT 1200V 500A 1645W INT-A-PAK

158.34

Infineon Technologies FF600R07ME4B11BOSA1

IGBT MODULE VCES 600V 600A

157.86

Infineon Technologies FS100R17N3E4B11BOSA1

IGBT MODULE VCES 600V 100A

157.68