IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

---

Infineon Technologies FF450R17ME4BOSA1

IGBT MODULE VCES 600V 450A

220.37

Vishay / Semiconductor - Diodes Division VS-GB75TP120N

IGBT 1200V 150A 543W INT-A-PAK

219.72

Infineon Technologies FS200R12PT4PBOSA1

MOD IGBT MED PWR ECONO4-1

218.44

Microsemi Corporation APTGL240TL120G

POWER MOD IGBT4 3LVL INVERT SP6

216.99

Microsemi Corporation APTGLQ400A120T6G

PWR MOD IGBT4 1200V 700A SP6

216.52

Microsemi Corporation APTGT400A120D3G

IGBT MOD TRENCH PHASE LEG D3

216.48

Microsemi Corporation APTGLQ200H120G

PWR MOD IGBT4 1200V 350A SP6

216.42

Microsemi Corporation APTGT200H120G

IGBT MOD TRENCH FULL BRIDGE SP6

215.14