IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Vishay / Semiconductor - Diodes Division VS-GB400TH120U

IGBT 1200V 660A 2660W INT-A-PAK

255.01

Powerex, Inc. CM400DU-5F

IGBT MOD DUAL 250V 400A F SER

251.37

Vishay / Semiconductor - Diodes Division VS-GB400TH120N

IGBT 1200V 800A 2604W INT-A-PAK

255.01

Infineon Technologies IFF600B12ME4S8PB11BOSA1

MEDIUM POWER ECONO

250.37

Infineon Technologies FF600R12ME4CPB11BPSA1

IGBT MODULE VCES 600V 600A

249.59

Infineon Technologies IFF600B12ME4B11BOSA1

MEDIUM POWER ECONO

246.04

Microsemi Corporation APTGT150H170G

IGBT MOD TRENCH FULL BRIDGE SP6

245.15

Powerex, Inc. CM200TU-5F

IGBT MOD 6PAC 250V 200A F SER

242.45