IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Infineon Technologies DF1400R12IP4DBOSA1

IGBT MODULE VCES 1200V 1400A

631.57

Infineon Technologies FD1000R17IE4DB2BOSA1

MODULE IGBT PRIME3-1

627.29

Infineon Technologies FZ1200R17HP4HOSA2

MODULE IGBT IHMB130-2

622.9

Infineon Technologies FZ1200R17HE4HOSA2

MODULE IGBT IHMB130-2

622.9

Infineon Technologies FS820R08A6P2LBBPSA1

HYBRID PACK DRIVE

604.84

Infineon Technologies DF1000R17IE4DB2BOSA1

IGBT MODULE 1700V 1000A

603.16

Infineon Technologies FF650R17IE4DPB2BOSA1

IGBT MODULE VCES 1700V 650A

599.95

Infineon Technologies FS820R08A6P2BPSA1

MOD HYBRID PACK DRIVE HYBRIDD-1

599.26