Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.

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Toshiba Semiconductor and Storage 2SC2229-O(MIT1F,M)

TRANS NPN 50MA 150V TO226-3

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Toshiba Semiconductor and Storage 2SC2229(TE6SAN1F,M

TRANS NPN 50MA 150V TO226-3

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Toshiba Semiconductor and Storage 2SC1627A-Y,PASF(M

TRANS NPN 400MA 80V TO226-3

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Toshiba Semiconductor and Storage 2SC1627A-O,PASF(M

TRANS NPN 400MA 80V TO226-3

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Toshiba Semiconductor and Storage 2SB1495,Q(M

TRANS PNP 3A 100V TO220-3

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Toshiba Semiconductor and Storage 2SB1495,Q(J

TRANS PNP 3A 100V TO220-3

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Toshiba Semiconductor and Storage 2SB1481(TOJS,Q,M)

TRANS PNP 4A 100V TO220-3

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Toshiba Semiconductor and Storage 2SB1457,T6YMEF(M

TRANS PNP 2A 100V TO226-3

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