Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.

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Toshiba Semiconductor and Storage 2SC2655-O(ND1,AF)

TRANS NPN 2A 50V TO226-3

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Toshiba Semiconductor and Storage 2SC2482(T6TOJS,F,M

TRANS NPN 100MA 300V TO226-3

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Toshiba Semiconductor and Storage 2SC2482(FJTN,F,M)

TRANS NPN 100MA 300V TO226-3

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Toshiba Semiconductor and Storage 2SC2383-Y,T6KEHF(M

TRANS NPN 1A 160V TO226-3

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Toshiba Semiconductor and Storage 2SC2383-Y(T6DNS,FM

TRANS NPN 1A 160V TO226-3

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Toshiba Semiconductor and Storage 2SC2383-O,T6ALPF(M

TRANS NPN 1A 160V TO226-3

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Toshiba Semiconductor and Storage 2SC2383-O(T6OMI,FM

TRANS NPN 1A 160V TO226-3

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Toshiba Semiconductor and Storage 2SC2235-Y,USNHF(M

TRANS NPN 800MA 120V TO226-3

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