Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.


Toshiba Semiconductor and Storage 2SC4604,T6F(J

TRANS NPN 3A 50V TO226-3

0

Toshiba Semiconductor and Storage 2SC4604,F(J

TRANS NPN 3A 50V TO226-3

0

Toshiba Semiconductor and Storage 2SC3672-O(T2ASH,FM

TRANS NPN 100MA 300V SC71

0

Toshiba Semiconductor and Storage 2SC3669-Y,T2PASF(M

TRANS NPN 2A 80V SC71

0

Toshiba Semiconductor and Storage 2SC3668-Y,T2F(J

TRANS NPN 2A 50V SC71

0

Toshiba Semiconductor and Storage 2SC3668-Y,F2PANF(J

TRANS NPN 2A 50V SC71

0

Toshiba Semiconductor and Storage 2SC3668-O,T2CLAF(J

TRANS NPN 2A 50V SC71

0

Toshiba Semiconductor and Storage 2SC3665-Y,T2YNSF(J

TRANS NPN 800MA 120V SC71

0