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WeEn Semiconductors BYV29X-600PQ
DIODE GEN PURP 600V 9A TO220F
- Manufacturer
- WeEn Semiconductors
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Reverse Recovery Time (trr)
- 1ns
- Current - Reverse Leakage @ Vr
- 200nA @ 40V
- Voltage - DC Reverse (Vr) (Max)
- 50V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 15mA (DC)
- Series
- -
- Operating Temperature - Junction
- -65°C ~ 175°C
- Packaging
- Tape & Reel (TR)
- Voltage - Forward (Vf) (Max) @ If
- 950mV @ 15mA
- Diode Type
- Schottky
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- DO-204AH, DO-35, Axial
- Capacitance @ Vr, F
- 2.1pF @ 0V, 1MHz
- Supplier Device Package
- DO-35