Vishay / Siliconix SUD35N10-26P-GE3

Product Details

Series

TrenchFET®

Power Dissipation (Max)

8.3W (Ta), 83W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-252

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

47nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 12V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

4.4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

26mOhm @ 12A, 10V