Vishay / Siliconix SQJ488EP-T1_GE3

Product Details

Rds On (Max) @ Id, Vgs

104mOhm @ 6A, 5V

Series

-

Power Dissipation (Max)

1.5W (Ta), 48W (Tj)

FET Type

N-Channel

Supplier Device Package

I-PAK

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±15V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

5V

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)