Vishay / Siliconix SQD50N10-8M9L_GE3

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2164pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

19A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

4.7mOhm @ 50A, 10V

Series

-

Power Dissipation (Max)

3.7W (Ta), 79W (Tc)

FET Type

N-Channel

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

33.7nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V