Vishay / Siliconix SQ7414AENW-T1_GE3

Product Details

Series

-

Power Dissipation (Max)

2.5W (Ta)

FET Type

P-Channel

Supplier Device Package

8-SOIC

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 8V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

20mOhm @ 11A, 10V