Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SQ2318AES-T1_GE3
MOSFET N-CHAN 40V SOT23
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 50433
Product Details
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 850mV @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 57mOhm @ 3.6A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 710mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-23-3 (TO-236)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 5.5nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 2.6A (Ta)