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Vishay / Siliconix SISS60DN-T1-GE3
MOSFET N-CH 30V W/SCHOTTKY PP 12
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 50
Product Details
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO251-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 10.5nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 700V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 225pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 5.4A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs(th) (Max) @ Id
- 3.5V @ 100µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.4Ohm @ 1A, 10V
- Series
- -
- Power Dissipation (Max)
- 53W (Tc)