Vishay / Siliconix SIR818DP-T1-GE3

Product Details

Vgs (Max)

±20V

Gate Charge (Qg) (Max) @ Vgs

122nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

7480pF @ 25V

Part Status

Obsolete

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Base Part Number

STD80

Vgs(th) (Max) @ Id

4.5V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Series

DeepGATE™, STripFET™ VI

Rds On (Max) @ Id, Vgs

6.5mOhm @ 40A, 10V

FET Type

N-Channel

Power Dissipation (Max)

120W (Tc)

Packaging

Cut Tape (CT)

Supplier Device Package

DPAK