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Vishay / Siliconix SIR662DP-T1-GE3
MOSFET N-CH 60V 60A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 90
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5400pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 90A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2.5V @ 500µA
- Operating Temperature
- 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.3mOhm @ 45A, 10V
- Series
- U-MOSVIII-H
- Power Dissipation (Max)
- 157W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-252-3
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 81nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V