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Vishay / Siliconix SIR638DP-T1-GE3
MOSFET N-CH 40V 100A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.72
- Stock
- 3000
Product Details
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 27nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2000pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 17A (Ta), 45A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 2.8V @ 36µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 5.7mOhm @ 45A, 10V
- Series
- OptiMOS™
- Power Dissipation (Max)
- 3W (Ta), 83W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D²PAK (TO-263AB)