Vishay / Siliconix SIHP690N60E-GE3

Product Details

FET Type

N-Channel

Power Dissipation (Max)

150W (Tc)

Packaging

Tube

Supplier Device Package

I2PAK (TO-262)

Vgs (Max)

±25V

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 100V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Base Part Number

STI24N

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Series

MDmesh™ II Plus

Rds On (Max) @ Id, Vgs

190mOhm @ 9A, 10V