Vishay / Siliconix SIHP24N65E-E3

Product Details

Rds On (Max) @ Id, Vgs

7.5mOhm @ 100A, 10V

Series

OptiMOS™

Power Dissipation (Max)

300W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO262-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

93nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

150V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

5470pF @ 75V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Vgs(th) (Max) @ Id

4V @ 270µA

Operating Temperature

-55°C ~ 175°C (TJ)