Vishay / Siliconix SIHP21N80AE-GE3

Product Details

Packaging

Tube

Supplier Device Package

TO-247

Vgs (Max)

±25V

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

816pF @ 100V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-247-3

Base Part Number

STW31N

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

150°C (TJ)

Series

MDmesh™ V

Rds On (Max) @ Id, Vgs

148mOhm @ 11A, 10V

FET Type

N-Channel

Power Dissipation (Max)

150W (Tc)