Vishay / Siliconix SIHP17N80E-GE3

Product Details

FET Type

N-Channel

Supplier Device Package

PowerPAK® 8 x 8

Packaging

Bulk

Gate Charge (Qg) (Max) @ Vgs

84nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

500V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2063pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

147mOhm @ 10A, 10V

Series

E

Power Dissipation (Max)

174W (Tc)