Vishay / Siliconix SIHP15N50E-GE3

Product Details

Package / Case

TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Vgs(th) (Max) @ Id

2.3V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

2.6mOhm @ 100A, 10V

Series

NexFET™

Power Dissipation (Max)

250W (Ta)

FET Type

N-Channel

Supplier Device Package

DDPAK/TO-263-3

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

132nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

11400pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

274A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount